Radiation damage studies of silicon detectors and searching for an intermediate mass Higgs boson at ATLAS

Parameterisations of bulk radiation damage in silicon are used to develop a model for the evolution of leakage currents in silicon microstrip detectors held under bias during irradiation. Leakage current measurements taken during proton irradiation of detectors at low temperatures are used to calculate the radiation damage parameters alpha, the current related damage constant, and beta, the rate of acceptor creation.