CHARACTERIZATION OF ELECTRICAL PROPERTIES OF LOW GAIN AVALANCHE DIODES

Low Gain Avalanche Diodes (LGADs) are a type of silicon detector based on the Avalanche Photo Diode (APD a preceding silicon-based detector technology. First fabricated at the Institute of Microelectronics of Barcelona (IMBCNM), LGADs have been designed to be especially suitable for use in high energy physics experiments like the LHC. Part of this Summer Student Project involved measuring the dependence of the efficiency and charge collection of an LGAD pixel on temperature and applied reverse bias voltage. The laboratory setup used to test the LGAD was made remotely accessible via a pre-existing LabVIEW based Timing Control Automation Software and the use of TeamViewer. The data collected from these lab tests was analysed using another pre-existing C++ and ROOT based analysis framework. The results from the data were interpreted and visualized using C++ and pyROOT. The LGAD tested showed the expected increase in charge collected and increase of efficiency with respect to increasing applied reverse bias voltage. In addition, the maximum efficiency was reached at notedly lower voltages at lower temperatures. This report describes the measurement and analysis procedure carried out to obtain these results.