Measurement and simulation of electrical properties of SiPM photon detectors

An electrical model for a Silicon-Photomultiplier (SiPM) is adapted and investigated in this thesis. The model parameters (quenching resistance, diode capacitance, quenching capaci- tance and grid capacitance) have been determined using detailed impedance measurements for different SiPMs produced by Hamamatsu and Ketek. Using these parameters, Spice sim- ulations have been performed and measured and simulated pulses were compared. Verifica- tions of single pulses and complete pulse trains showed that the model is able to describe and simulate SiPMs appropriately. The adapted model can now be used for detector simulations and electronics development.