Estudio de las Diferencias de Calbracion VCAL Entre Pixeles y Estudio de los Effectos Macroscopicos de la Radiacion Sobre Sensores del Detector de Pixeles de CMS

This work presents the study of two aspects of the performance of the CMS pixel detectors which are relevant to predicting their behavior under operating conditions. The first study quantifies the differences of the response of individual pixels to a calibration signal. The data was taken using X ray photon sources and it was analyzed using software wrote in C++ and ROOT. The precision of position measurements by the detector depends critically on understanding the relative response of pixels. The second study concerns the performance of the pixel silicon sensor exposed to high radiation doses of protons and pions and can be used to predict at what level of radiation exposure the detector will need to be replaced. It shows the main macroscopic changes by the sensors, specifically it work study the changes in the inverse current and changes of the depletion voltage.